KPE4703A MOSFET. Datasheet pdf. Equivalent
Type Designator: KPE4703A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.2 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP8
KPE4703A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KPE4703A Datasheet (PDF)
..1. Size:174K kia
kpe4703a.pdf
kpe4703a.pdf
-8A-30VKPE4703AP-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =19m(typ)@V =10 VDS(on) GSSuper lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionTheKPE4703Ais the highcell density trenchedP-chMOSFETs, whichprovide excellent RDSONand gate charge
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