KPE4703A Specs and Replacement
Type Designator: KPE4703A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP8
KPE4703A substitution
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KPE4703A datasheet
kpe4703a.pdf
-8A -30V KPE4703A P-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features R =19m (typ)@V =10 V DS(on) GS Super lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology 2.Description TheKPE4703Ais the highcell density trenchedP-chMOSFET s, whichprovide excellent RDSON and gate charge ... See More ⇒
Detailed specifications: KNY2803A, KNY3204A, KNY3303A, KNY3403A, KNY3404C, KNY3406C, KNY3703A, KPE4403A2, IRF740, S-L2N7002DW1T1G, L2N7002FLT1G, L2N7002KDW1T1G, L2N7002KDW1T3G, L2N7002KLT1G, L2N7002KN3T5G, S-L2N7002LT1G, L2N7002M3T5G
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History: DMG2305UXQ | 3N75 | BR40P03 | PHB32N06 | SMP40N10 | 2SK388 | 60NM60L-T47
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