LBSS260DW1T1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LBSS260DW1T1G
Marking Code: J3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 3.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.44 Ohm
Package: SOT363
LBSS260DW1T1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LBSS260DW1T1G Datasheet (PDF)
..1. Size:426K lrc
lbss260dw1t1g s-lbss260dw1t1g.pdf
lbss260dw1t1g s-lbss260dw1t1g.pdf
LBSS260DW1T1GS-LBSS260DW1T1GN-Channel 60-V Power Mosfet1. FEATURESHigh speed switchESD protectedWe declare that the material of product compliance withRoHS requirements and Halogen Free.SC88(SOT-363)S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.2. APPLICATION
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