LBSS260DW1T1G PDF and Equivalents Search

 

LBSS260DW1T1G Specs and Replacement

Type Designator: LBSS260DW1T1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.44 Ohm

Package: SOT363

LBSS260DW1T1G substitution

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LBSS260DW1T1G datasheet

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 lbss260dw1t1g s-lbss260dw1t1g.pdf pdf_icon

LBSS260DW1T1G

LBSS260DW1T1G S-LBSS260DW1T1G N-Channel 60-V Power Mosfet 1. FEATURES High speed switch ESD protected We declare that the material of product compliance with RoHS requirements and Halogen Free. SC88(SOT-363) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATION ... See More ⇒

Detailed specifications: LBSS138LT1G, S-LBSS138LT1G, LBSS138WT1G, S-LBSS138WT1G, LBSS139DW1T1G, LBSS139DW1T3G, LBSS139LT1G, LBSS139LT3G, 2SK3878, S-LBSS260DW1T1G, LBSS8402DW1T1G, S-LBSS8402DW1T1G, LBSS84DW1T1G, S-LBSS84DW1T1G, LBSS84ELT1G, S-LBSS84ELT1G, SLD2N65UZ

Keywords - LBSS260DW1T1G MOSFET specs

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