SLD2N65UZ PDF and Equivalents Search

 

SLD2N65UZ Specs and Replacement

Type Designator: SLD2N65UZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.15 Ohm

Package: TO252

SLD2N65UZ substitution

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SLD2N65UZ datasheet

 ..1. Size:918K  maple semi
 sld2n65uz slu2n65uz.pdf pdf_icon

SLD2N65UZ

SLD2N65UZ / SLU2N65UZ 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 1.9A, 650V, RDS(on)typ = 3.45 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 5.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchin... See More ⇒

Detailed specifications: LBSS260DW1T1G, S-LBSS260DW1T1G, LBSS8402DW1T1G, S-LBSS8402DW1T1G, LBSS84DW1T1G, S-LBSS84DW1T1G, LBSS84ELT1G, S-LBSS84ELT1G, IRFP260, SLU2N65UZ, SLD3101, SLD5N50S2, SLU5N50S2, SLD5N65S, SLU5N65S, SLD60R380S2, SLU60R380S2

Keywords - SLD2N65UZ MOSFET specs

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