All MOSFET. SLD2N65UZ Datasheet

 

SLD2N65UZ Datasheet and Replacement


   Type Designator: SLD2N65UZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.15 Ohm
   Package: TO252
 

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SLD2N65UZ Datasheet (PDF)

 ..1. Size:918K  maple semi
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SLD2N65UZ

SLD2N65UZ / SLU2N65UZ650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 1.9A, 650V, RDS(on)typ = 3.45@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 5.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchin

Datasheet: LBSS260DW1T1G , S-LBSS260DW1T1G , LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , S-LBSS84DW1T1G , LBSS84ELT1G , S-LBSS84ELT1G , IRFP260 , SLU2N65UZ , SLD3101 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 .

History: APM4410 | LN2324DT2AG | S-LBSS8402DW1T1G | AP20T15GM | JMSH1004BG | SW1N60A | IRF7341I

Keywords - SLD2N65UZ MOSFET datasheet

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