SLD2N65UZ MOSFET. Datasheet pdf. Equivalent
Type Designator: SLD2N65UZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.5 nC
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 51 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.15 Ohm
Package: TO252
SLD2N65UZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLD2N65UZ Datasheet (PDF)
sld2n65uz slu2n65uz.pdf
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SLD2N65UZ / SLU2N65UZ650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 1.9A, 650V, RDS(on)typ = 3.45@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 5.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchin
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