All MOSFET. SLU2N65UZ Datasheet

 

SLU2N65UZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLU2N65UZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.15 Ohm
   Package: TO251

 SLU2N65UZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLU2N65UZ Datasheet (PDF)

 ..1. Size:918K  maple semi
 sld2n65uz slu2n65uz.pdf

SLU2N65UZ SLU2N65UZ

SLD2N65UZ / SLU2N65UZ650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 1.9A, 650V, RDS(on)typ = 3.45@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 5.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchin

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