SLU2N65UZ Datasheet. Specs and Replacement
Type Designator: SLU2N65UZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.15 Ohm
Package: TO251
SLU2N65UZ substitution
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SLU2N65UZ datasheet
sld2n65uz slu2n65uz.pdf
SLD2N65UZ / SLU2N65UZ 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 1.9A, 650V, RDS(on)typ = 3.45 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 5.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchin... See More ⇒
Detailed specifications: S-LBSS260DW1T1G, LBSS8402DW1T1G, S-LBSS8402DW1T1G, LBSS84DW1T1G, S-LBSS84DW1T1G, LBSS84ELT1G, S-LBSS84ELT1G, SLD2N65UZ, 4435, SLD3101, SLD5N50S2, SLU5N50S2, SLD5N65S, SLU5N65S, SLD60R380S2, SLU60R380S2, SLD60R650S2
Keywords - SLU2N65UZ MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
