All MOSFET. SLU5N65S Datasheet

 

SLU5N65S Datasheet and Replacement


   Type Designator: SLU5N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.3 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO251
 
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SLU5N65S Datasheet (PDF)

 ..1. Size:463K  maple semi
 sld5n65s slu5n65s.pdf pdf_icon

SLU5N65S

SLD5N65S / SLU5N65SSLD5N65S / SLU5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on) = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13.3nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching

 9.1. Size:319K  maple semi
 sld5n50s2 slu5n50s2.pdf pdf_icon

SLU5N65S

LEAD FREEPbRoHSSLD5N50S2 / SLU5N50S2500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.35@VGS = 10 V( ) ypadvanced planar stripe DMOS technology. - Low gate charge ( typical 10 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide super

Datasheet: LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , SLD3101 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , RFP50N06 , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 .

History: 2SK2441

Keywords - SLU5N65S MOSFET datasheet

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