SLU5N65S MOSFET Datasheet: N-Ch, 650V, 4.5A. Full specification with pinout and replacement list

SLU5N65S Specs and Replacement

   Type Designator: SLU5N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO251

SLU5N65S substitution

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SLU5N65S datasheet

..1. Size:463K maple semi
sld5n65s slu5n65s.pdf pdf_icon

SLD5N65S / SLU5N65S SLD5N65S / SLU5N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on) = 2.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 13.3nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching... See More ⇒

9.1. Size:319K maple semi
sld5n50s2 slu5n50s2.pdf pdf_icon

LEAD FREE Pb RoHS SLD5N50S2 / SLU5N50S2 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 500V, RDS(on) typ. = 1.35 @VGS = 10 V ( ) yp advanced planar stripe DMOS technology. - Low gate charge ( typical 10 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide super... See More ⇒

Detailed specifications: LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , SLD3101 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , AON7410 , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 .