SLU70R600S2 Datasheet and Replacement
Type Designator: SLU70R600S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO251
SLU70R600S2 substitution
SLU70R600S2 Datasheet (PDF)
sld70r600s2 slu70r600s2.pdf

SLD70R600S2/SLU70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
sld70r420s2 slu70r420s2.pdf

SLD70R420S2/SLU70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc
Datasheet: SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , P60NF06 , SLD70R900S2 , SLF70R900S2 , SLD740UZ , SLD80R380SJ , SLU80R380SJ , SLP80R380SJ , SLF80R380SJ , SLB80R380SJ .
History: BSC027N04LSG | 2SK1928 | IXTJ3N150 | VBZE04N03 | SSM3K56CT | AM90N06-04M2B | AUIRFP4227
Keywords - SLU70R600S2 MOSFET datasheet
SLU70R600S2 cross reference
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History: BSC027N04LSG | 2SK1928 | IXTJ3N150 | VBZE04N03 | SSM3K56CT | AM90N06-04M2B | AUIRFP4227



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