All MOSFET. SLD740UZ Datasheet

 

SLD740UZ Datasheet and Replacement


   Type Designator: SLD740UZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO252
 

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SLD740UZ Datasheet (PDF)

 ..1. Size:591K  maple semi
 sld740uz.pdf pdf_icon

SLD740UZ

LEAD FREEPbRoHS SLD740UZ400V N-Channel MOSFETGeneral Description Features - 11A, 400V, RDS(on)typ. = 0.55@VGS = 10 V - Low gate charge ( typical 23nC)This Power MOSFET is produced using Maple semis - High ruggednessadvanced trench MOSFET technology. - Fast switchingThis advanced technology has been especially tailored - 100% avalanche testedto minimize on-sta

Datasheet: SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , SLU70R600S2 , SLD70R900S2 , SLF70R900S2 , IRFP250 , SLD80R380SJ , SLU80R380SJ , SLP80R380SJ , SLF80R380SJ , SLB80R380SJ , SLI80R380SJ , SLD80R500SJ , SLU80R500SJ .

History: RCX700N20 | KQD1P50 | MMP4411DY | IRLL2705TR | IRLML2060TR | SLD80R380SJ | 2N65L-TF3T-T

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