SLD740UZ Datasheet. Specs and Replacement

Type Designator: SLD740UZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO252

SLD740UZ substitution

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SLD740UZ datasheet

 ..1. Size:591K  maple semi
 sld740uz.pdf pdf_icon

SLD740UZ

LEAD FREE Pb RoHS SLD740UZ 400V N-Channel MOSFET General Description Features - 11A, 400V, RDS(on)typ. = 0.55 @VGS = 10 V - Low gate charge ( typical 23nC) This Power MOSFET is produced using Maple semi s - High ruggedness advanced trench MOSFET technology. - Fast switching This advanced technology has been especially tailored - 100% avalanche tested to minimize on-sta... See More ⇒

Detailed specifications: SLU65R700S2, SLD65R950S2, SLD70R420S2, SLU70R420S2, SLD70R600S2, SLU70R600S2, SLD70R900S2, SLF70R900S2, IRFP250, SLD80R380SJ, SLU80R380SJ, SLP80R380SJ, SLF80R380SJ, SLB80R380SJ, SLI80R380SJ, SLD80R500SJ, SLU80R500SJ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.