STK14N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: STK14N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: SOT82
Datasheet: STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 , STK14N06 , IRF1404 , STK16N10L , STK17N10 , STK18N05 , STK18N05L , STK18N06 , STK18N06L , STK22N05 , STK22N06 .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F