SLF50R140SJ Datasheet. Specs and Replacement
Type Designator: SLF50R140SJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO220F
SLF50R140SJ substitution
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SLF50R140SJ datasheet
slf50r140sj slp50r140sj.pdf
SLF50R140SJ SLP50R140SJ 500V N-Channel MOSFET Features General Description Features -25A, 500V, RDS(on) typ.= 0.12 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate c... See More ⇒
Detailed specifications: SLD80R850SJ, SLU80R850SJ, SLP80R850SJ, SLF80R850SJ, SLB80R850SJ, SLI80R850SJ, SLF3101, SLP3101, IRF1405, SLP50R140SJ, SLF60R080SS, SLF60R160S2, SLF60R650S2, SLF65R300S2, SLF65R700S2, SLF65R950S2, SLH60R080SS
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