All MOSFET. SLF50R140SJ Datasheet

 

SLF50R140SJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLF50R140SJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO220F

 SLF50R140SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLF50R140SJ Datasheet (PDF)

 ..1. Size:788K  maple semi
 slf50r140sj slp50r140sj.pdf

SLF50R140SJ SLF50R140SJ

SLF50R140SJSLP50R140SJ500V N-Channel MOSFET FeaturesGeneral Description Features -25A, 500V, RDS(on) typ.= 0.12@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate c

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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