All MOSFET. SLP50R140SJ Datasheet

 

SLP50R140SJ Datasheet and Replacement


   Type Designator: SLP50R140SJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO220
 

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SLP50R140SJ Datasheet (PDF)

 ..1. Size:788K  maple semi
 slf50r140sj slp50r140sj.pdf pdf_icon

SLP50R140SJ

SLF50R140SJSLP50R140SJ500V N-Channel MOSFET FeaturesGeneral Description Features -25A, 500V, RDS(on) typ.= 0.12@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate c

Datasheet: SLU80R850SJ , SLP80R850SJ , SLF80R850SJ , SLB80R850SJ , SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , MMIS60R580P , SLF60R080SS , SLF60R160S2 , SLF60R650S2 , SLF65R300S2 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C .

History: AP4513GH-A | WMJ36N65C4 | IRF6646 | P0403BDA | DAC060N120P1 | AP4418GJ | NCE60P70G

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