SLP50R140SJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SLP50R140SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO220
SLP50R140SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLP50R140SJ Datasheet (PDF)
slf50r140sj slp50r140sj.pdf
SLF50R140SJSLP50R140SJ500V N-Channel MOSFET FeaturesGeneral Description Features -25A, 500V, RDS(on) typ.= 0.12@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate c
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
