All MOSFET. SLP12N60C Datasheet

 

SLP12N60C Datasheet and Replacement


   Type Designator: SLP12N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30.5 nS
   Cossⓘ - Output Capacitance: 206 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.61 Ohm
   Package: TO220
 

 SLP12N60C substitution

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SLP12N60C Datasheet (PDF)

 ..1. Size:1352K  maple semi
 slp12n60c slf12n60c.pdf pdf_icon

SLP12N60C

SLP12N60C / SLF12N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 12.0A, 600V, RDS(on)typ = 0.51@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44.7nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switch

 7.1. Size:1813K  maple semi
 slp12n65c slf12n65c.pdf pdf_icon

SLP12N60C

SLP12N65C / SLF12N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 12A, 650V, RDS(on) typ. = 0.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 47nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

Datasheet: SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C , SLF10N65C , SLP10N65S , SLF10N65S , IRFP064N , SLF12N60C , SLP12N65C , SLF12N65C , SLP13N50A , SLF13N50A , SLP13N50C , SLF13N50C , SLP16N50C .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - SLP12N60C MOSFET datasheet

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