SLP12N60C Datasheet. Specs and Replacement
Type Designator: SLP12N60C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 44.7 nC
tr ⓘ - Rise Time: 30.5 nS
Cossⓘ - Output Capacitance: 206 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.61 Ohm
Package: TO220
SLP12N60C substitution
- MOSFET ⓘ Cross-Reference Search
SLP12N60C datasheet
slp12n60c slf12n60c.pdf
SLP12N60C / SLF12N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 12.0A, 600V, RDS(on)typ = 0.51 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 44.7nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switch... See More ⇒
slp12n65c slf12n65c.pdf
SLP12N65C / SLF12N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 12A, 650V, RDS(on) typ. = 0.6 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 47nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒
Detailed specifications: SLP10N60C, SLF10N60C, SLP10N65A, SLF10N65A, SLP10N65C, SLF10N65C, SLP10N65S, SLF10N65S, AO4468, SLF12N60C, SLP12N65C, SLF12N65C, SLP13N50A, SLF13N50A, SLP13N50C, SLF13N50C, SLP16N50C
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