SLP13N50C Datasheet and Replacement
Type Designator: SLP13N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36.5 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.463 Ohm
Package: TO220
SLP13N50C substitution
SLP13N50C Datasheet (PDF)
slp13n50c slf13n50c.pdf

SLP13N50C / SLF13N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 13A, 500V, RDS(on)typ. = 386m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
slp13n50a slf13n50a.pdf

LEAD FREEPbRoHSSLP13N50A / SLF13N50A500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Maple semis advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483@VGS = 10 VThis advanced technology has been especially tailored - Low gate charge ( typical 19.1nC)to minimize on-state resistance, provide superior switching - Low Crss (
Datasheet: SLP10N65S , SLF10N65S , SLP12N60C , SLF12N60C , SLP12N65C , SLF12N65C , SLP13N50A , SLF13N50A , IRF840 , SLF13N50C , SLP16N50C , SLF16N50C , SLP16N50S , SLF16N50S , SLP18N50C , SLF18N50C , SLP20N50C .
History: TK17N65W | R6008FNX | TK16J60W | MMDF3N04HD | SQM110N04-04 | SST65R1K2S2E | SFP055N80C2
Keywords - SLP13N50C MOSFET datasheet
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History: TK17N65W | R6008FNX | TK16J60W | MMDF3N04HD | SQM110N04-04 | SST65R1K2S2E | SFP055N80C2



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