All MOSFET. SLP18N50C Datasheet

 

SLP18N50C Datasheet and Replacement


   Type Designator: SLP18N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 229 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43.5 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.283 Ohm
   Package: TO220
 

 SLP18N50C substitution

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SLP18N50C Datasheet (PDF)

 ..1. Size:1346K  maple semi
 slp18n50c slf18n50c.pdf pdf_icon

SLP18N50C

SLP18N50C / SLF18N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 500V, RDS(on)typ. = 236m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 69nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

Datasheet: SLP13N50A , SLF13N50A , SLP13N50C , SLF13N50C , SLP16N50C , SLF16N50C , SLP16N50S , SLF16N50S , IRFP460 , SLF18N50C , SLP20N50C , SLF20N50C , SLP2N65UZ , SLF2N65UZ , SLP32N20C , SLF32N20C , SLP40N26C .

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