SLF18N50C Datasheet. Specs and Replacement
Type Designator: SLF18N50C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43.5 nS
Cossⓘ - Output Capacitance: 335 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.283 Ohm
Package: TO220F
SLF18N50C substitution
- MOSFET ⓘ Cross-Reference Search
SLF18N50C datasheet
slp18n50c slf18n50c.pdf
SLP18N50C / SLF18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 500V, RDS(on)typ. = 236m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 69nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒
Detailed specifications: SLF13N50A, SLP13N50C, SLF13N50C, SLP16N50C, SLF16N50C, SLP16N50S, SLF16N50S, SLP18N50C, IRF1404, SLP20N50C, SLF20N50C, SLP2N65UZ, SLF2N65UZ, SLP32N20C, SLF32N20C, SLP40N26C, SLF40N26C
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
