SLF18N50C MOSFET. Datasheet pdf. Equivalent
Type Designator: SLF18N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 69 nC
trⓘ - Rise Time: 43.5 nS
Cossⓘ - Output Capacitance: 335 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.283 Ohm
Package: TO220F
SLF18N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLF18N50C Datasheet (PDF)
..1. Size:1346K maple semi
slp18n50c slf18n50c.pdf
slp18n50c slf18n50c.pdf
SLP18N50C / SLF18N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 500V, RDS(on)typ. = 236m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 69nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
