SLP740UZ Datasheet and Replacement
Type Designator: SLP740UZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 193.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 430 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
Package: TO220
SLP740UZ substitution
SLP740UZ Datasheet (PDF)
slp740uz slf740uz.pdf

LEAD FREEPbRoHSSLP740UZ/SLF740UZSLP740UZ/SLF740UZ430V N-Channel MOSFETGeneral Description Features- 11A, 430V, RDS(on)typ. = 0.53@VGS = 10 V- Low gate charge ( typical 15.7nC)This Power MOSFET is produced using Maple semis - High ruggednessadvanced planar stripe DMOS technology. - Fast switchingFast switchingThis advanced technology has been especially tailored
Datasheet: SLP60R850S2 , SLF60R850S2 , SLP65R420S2 , SLF65R420S2 , SLP70R420S2 , SLF70R420S2 , SLP70R600S2 , SLF70R600S2 , IRF9540N , SLF740UZ , SLP7N60C , SLF7N60C , SLP7N65C , SLF7N65C , SLP7N70C , SLF7N70C , SLP7N80C .
History: AFP8931 | VS6614GS | JSM7788 | IRFY230C | SFP60N100 | 2SK3019 | NCE1216
Keywords - SLP740UZ MOSFET datasheet
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History: AFP8931 | VS6614GS | JSM7788 | IRFY230C | SFP60N100 | 2SK3019 | NCE1216



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