All MOSFET. SLP8N60C Datasheet

 

SLP8N60C Datasheet and Replacement


   Type Designator: SLP8N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

 SLP8N60C substitution

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SLP8N60C Datasheet (PDF)

 ..1. Size:303K  maple semi
 slp8n60c slf8n60c.pdf pdf_icon

SLP8N60C

SLP8N60C / SLF8N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.5A, 600V, RDS(on) typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 29nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

 8.1. Size:361K  maple semi
 slp8n65c slf8n65c.pdf pdf_icon

SLP8N60C

SLP8N65C/SLF8N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.5A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 29nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

Datasheet: SLF7N65C , SLP7N70C , SLF7N70C , SLP7N80C , SLF7N80C , SLP80R240SJ , SLF80R240SJ , SLB80R240SJ , IRFP250 , SLF8N60C , SLP8N65C , SLF8N65C , SLW18N50C , SLW20N50C , SLW24N50C , SLH24N50C , SLW9N90C .

History: FTK2N65P

Keywords - SLP8N60C MOSFET datasheet

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