All MOSFET. SLW18N50C Datasheet

 

SLW18N50C Datasheet and Replacement


   Type Designator: SLW18N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO3P
 

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SLW18N50C Datasheet (PDF)

 ..1. Size:265K  maple semi
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SLW18N50C

SLW18N50CSLW18N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 500V, RDS(on) = 0.32@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching Fast switchingto m

Datasheet: SLF7N80C , SLP80R240SJ , SLF80R240SJ , SLB80R240SJ , SLP8N60C , SLF8N60C , SLP8N65C , SLF8N65C , P60NF06 , SLW20N50C , SLW24N50C , SLH24N50C , SLW9N90C , LBSS84LT1G , S-LBSS84LT1G , LBSS84WT1G , S-LBSS84WT1G .

History: BL80N20-W | 2SK1436 | VBFB165R07S | DH170P04V | AM20P15-295D | PTD4N60 | AFP3497

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