All MOSFET. SLW18N50C Datasheet

 

SLW18N50C MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLW18N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO3P

 SLW18N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLW18N50C Datasheet (PDF)

 ..1. Size:265K  maple semi
 slw18n50c.pdf

SLW18N50C SLW18N50C

SLW18N50CSLW18N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 500V, RDS(on) = 0.32@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching Fast switchingto m

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TMD7N60H | 2SK3557-7-TB-E | FDY1002PZ | GP2M007A065XG | AFN3414 | FHF8N60A

 

 
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