All MOSFET. SLW20N50C Datasheet

 

SLW20N50C Datasheet and Replacement


   Type Designator: SLW20N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 400 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO3P
 

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SLW20N50C Datasheet (PDF)

 ..1. Size:281K  maple semi
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SLW20N50C

SLW20N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 20A, 500V, RDS(on) typ. = 0.21@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperforman

Datasheet: SLP80R240SJ , SLF80R240SJ , SLB80R240SJ , SLP8N60C , SLF8N60C , SLP8N65C , SLF8N65C , SLW18N50C , CS150N03A8 , SLW24N50C , SLH24N50C , SLW9N90C , LBSS84LT1G , S-LBSS84LT1G , LBSS84WT1G , S-LBSS84WT1G , LN2302BLT1G .

History: C2M090W035 | LD1014D | AP3N1R0MT | 3090K | STU456S | VEC2415 | ISCNH371D

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