SLW20N50C Specs and Replacement

Type Designator: SLW20N50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO3P

SLW20N50C substitution

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SLW20N50C datasheet

 ..1. Size:281K  maple semi
 slw20n50c.pdf pdf_icon

SLW20N50C

SLW20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 500V, RDS(on) typ. = 0.21 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 50nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performan... See More ⇒

Detailed specifications: SLP80R240SJ, SLF80R240SJ, SLB80R240SJ, SLP8N60C, SLF8N60C, SLP8N65C, SLF8N65C, SLW18N50C, BS170, SLW24N50C, SLH24N50C, SLW9N90C, LBSS84LT1G, S-LBSS84LT1G, LBSS84WT1G, S-LBSS84WT1G, LN2302BLT1G

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