All MOSFET. SLW9N90C Datasheet

 

SLW9N90C Datasheet and Replacement


   Type Designator: SLW9N90C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 228 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3P
 

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SLW9N90C Datasheet (PDF)

 ..1. Size:167K  maple semi
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SLW9N90C

This Power MOSFET is produced using Maple semis - 9A, 900V, RDS(on) = 1.05 @VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 70 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching Fast switchingminimize on state r

Datasheet: SLP8N60C , SLF8N60C , SLP8N65C , SLF8N65C , SLW18N50C , SLW20N50C , SLW24N50C , SLH24N50C , IRF1407 , LBSS84LT1G , S-LBSS84LT1G , LBSS84WT1G , S-LBSS84WT1G , LN2302BLT1G , S-LN2302BLT1G , LN2302LT1G , LN2306LT1G .

History: LPN2010C | 2SK1386

Keywords - SLW9N90C MOSFET datasheet

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