SLW9N90C Specs and Replacement

Type Designator: SLW9N90C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 228 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3P

SLW9N90C substitution

- MOSFET ⓘ Cross-Reference Search

 

SLW9N90C datasheet

 ..1. Size:167K  maple semi
 slw9n90c.pdf pdf_icon

SLW9N90C

This Power MOSFET is produced using Maple semi s - 9A, 900V, RDS(on) = 1.05 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 70 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching Fast switching minimize on state r... See More ⇒

Detailed specifications: SLP8N60C, SLF8N60C, SLP8N65C, SLF8N65C, SLW18N50C, SLW20N50C, SLW24N50C, SLH24N50C, IRF1407, LBSS84LT1G, S-LBSS84LT1G, LBSS84WT1G, S-LBSS84WT1G, LN2302BLT1G, S-LN2302BLT1G, LN2302LT1G, LN2306LT1G

Keywords - SLW9N90C MOSFET specs

 SLW9N90C cross reference

 SLW9N90C equivalent finder

 SLW9N90C pdf lookup

 SLW9N90C substitution

 SLW9N90C replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs