All MOSFET. LN2302LT1G Datasheet

 

LN2302LT1G Datasheet and Replacement


   Type Designator: LN2302LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.56 nS
   Cossⓘ - Output Capacitance: 80.56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

 LN2302LT1G substitution

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LN2302LT1G Datasheet (PDF)

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LN2302LT1G

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LN2302LT1G

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET FEATURES RDS(ON)85m@VGS=4.5V LN2302BLT1G RDS(ON)115m@VGS=2.5V S-LN2302BLT1G RDS(ON)135m@VGS=1.8V 3 Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 12 S- Prefix for Automotive and Other Applications Re

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LN2302LT1G

LN2306LT1GS-LN2306LT1G30V N-Channel Enhancement-Mode MOSFET1. FEATURESVDS= 30VRDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43mRDS(ON), VGS@2.5V, IDS@4.0A = 62mSOT23(TO-236) We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring

Datasheet: SLH24N50C , SLW9N90C , LBSS84LT1G , S-LBSS84LT1G , LBSS84WT1G , S-LBSS84WT1G , LN2302BLT1G , S-LN2302BLT1G , 75N75 , LN2306LT1G , S-LN2306LT1G , LN2312LT1G , S-LN2312LT1G , LN2324DT2AG , LN235N3T5G , LN4501LT1G , LN8340DT1AG .

History: TF2312 | AP72T02GH | PMPB10EN | NCE50NF220K | HGN088N15S | AM2340N | MPSW65M046CFD

Keywords - LN2302LT1G MOSFET datasheet

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