LN2302LT1G Specs and Replacement

Type Designator: LN2302LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.56 nS

Cossⓘ - Output Capacitance: 80.56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

LN2302LT1G substitution

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LN2302LT1G datasheet

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LN2302LT1G

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LN2302LT1G

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 85m @VGS=4.5V LN2302BLT1G RDS(ON) 115m @VGS=2.5V S-LN2302BLT1G RDS(ON) 135m @VGS=1.8V 3 Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1 2 S- Prefix for Automotive and Other Applications Re... See More ⇒

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LN2302LT1G

LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET 1. FEATURES VDS= 30V RDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43m RDS(ON), VGS@2.5V, IDS@4.0A = 62m SOT23(TO-236) We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring... See More ⇒

Detailed specifications: SLH24N50C, SLW9N90C, LBSS84LT1G, S-LBSS84LT1G, LBSS84WT1G, S-LBSS84WT1G, LN2302BLT1G, S-LN2302BLT1G, 18N50, LN2306LT1G, S-LN2306LT1G, LN2312LT1G, S-LN2312LT1G, LN2324DT2AG, LN235N3T5G, LN4501LT1G, LN8340DT1AG

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