LN2302LT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LN2302LT1G
Marking Code: N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.69 nC
trⓘ - Rise Time: 7.56 nS
Cossⓘ - Output Capacitance: 80.56 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
LN2302LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LN2302LT1G Datasheet (PDF)
ln2302blt1g s-ln2302blt1g.pdf
LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET FEATURES RDS(ON)85m@VGS=4.5V LN2302BLT1G RDS(ON)115m@VGS=2.5V S-LN2302BLT1G RDS(ON)135m@VGS=1.8V 3 Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 12 S- Prefix for Automotive and Other Applications Re
ln2306lt1g s-ln2306lt1g.pdf
LN2306LT1GS-LN2306LT1G30V N-Channel Enhancement-Mode MOSFET1. FEATURESVDS= 30VRDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43mRDS(ON), VGS@2.5V, IDS@4.0A = 62mSOT23(TO-236) We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring
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