All MOSFET. LN2306LT1G Datasheet

 

LN2306LT1G Datasheet and Replacement


   Type Designator: LN2306LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 80.85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT23
 

 LN2306LT1G substitution

   - MOSFET ⓘ Cross-Reference Search

 

LN2306LT1G Datasheet (PDF)

 ..1. Size:450K  lrc
 ln2306lt1g s-ln2306lt1g.pdf pdf_icon

LN2306LT1G

LN2306LT1GS-LN2306LT1G30V N-Channel Enhancement-Mode MOSFET1. FEATURESVDS= 30VRDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43mRDS(ON), VGS@2.5V, IDS@4.0A = 62mSOT23(TO-236) We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring

 9.1. Size:623K  lrc
 ln2302lt1g.pdf pdf_icon

LN2306LT1G

 9.2. Size:316K  lrc
 ln2302blt1g s-ln2302blt1g.pdf pdf_icon

LN2306LT1G

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET FEATURES RDS(ON)85m@VGS=4.5V LN2302BLT1G RDS(ON)115m@VGS=2.5V S-LN2302BLT1G RDS(ON)135m@VGS=1.8V 3 Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 12 S- Prefix for Automotive and Other Applications Re

Datasheet: SLW9N90C , LBSS84LT1G , S-LBSS84LT1G , LBSS84WT1G , S-LBSS84WT1G , LN2302BLT1G , S-LN2302BLT1G , LN2302LT1G , 2N60 , S-LN2306LT1G , LN2312LT1G , S-LN2312LT1G , LN2324DT2AG , LN235N3T5G , LN4501LT1G , LN8340DT1AG , LN8342DT1AG .

History: CTLM8110-M832D | HSS2306A

Keywords - LN2306LT1G MOSFET datasheet

 LN2306LT1G cross reference
 LN2306LT1G equivalent finder
 LN2306LT1G lookup
 LN2306LT1G substitution
 LN2306LT1G replacement

 

 
Back to Top

 


 
.