LN2312LT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LN2312LT1G
Marking Code: N12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.2 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOT23
LN2312LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LN2312LT1G Datasheet (PDF)
..1. Size:690K lrc
ln2312lt1g s-ln2312lt1g.pdf
ln2312lt1g s-ln2312lt1g.pdf
LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET VDS= 20V LN2312LT1GRDS(ON), Vgs@4.5V, Ids@5.0A = 41m S-LN2312LT1GRDS(ON), Vgs@2.5V, Ids@4.5A = 47m Features 3Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1we declare that the material of product 2compliance with RoHS requirements.SOT 23 (TO236AB)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
