LN2312LT1G Specs and Replacement

Type Designator: LN2312LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SOT23

LN2312LT1G substitution

- MOSFET ⓘ Cross-Reference Search

 

LN2312LT1G datasheet

 ..1. Size:690K  lrc
 ln2312lt1g s-ln2312lt1g.pdf pdf_icon

LN2312LT1G

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V LN2312LT1G RDS(ON), Vgs@4.5V, Ids@5.0A = 41m S-LN2312LT1G RDS(ON), Vgs@2.5V, Ids@4.5A = 47m Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1 we declare that the material of product 2 compliance with RoHS requirements. SOT 23 (TO 236AB) ... See More ⇒

Detailed specifications: S-LBSS84LT1G, LBSS84WT1G, S-LBSS84WT1G, LN2302BLT1G, S-LN2302BLT1G, LN2302LT1G, LN2306LT1G, S-LN2306LT1G, IRF2807, S-LN2312LT1G, LN2324DT2AG, LN235N3T5G, LN4501LT1G, LN8340DT1AG, LN8342DT1AG, LNA2306LT1G, S-LNA2306LT1G

Keywords - LN2312LT1G MOSFET specs

 LN2312LT1G cross reference

 LN2312LT1G equivalent finder

 LN2312LT1G pdf lookup

 LN2312LT1G substitution

 LN2312LT1G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.