LN2324DT2AG Specs and Replacement

Type Designator: LN2324DT2AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: DFN2020-6S

LN2324DT2AG substitution

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LN2324DT2AG datasheet

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LN2324DT2AG

LN2324DT2AG S-LN2324DT2AG 20V N-Channel (D-S) MOSFET 1. FEATURES VDS =20V RDS(ON) 10.5m ,VGS@4.5V,IDS@10A RDS(ON) 12.5m ,VGS@2.5V,IDS@8A Low RDS(ON) trench technology. Low thermal impedance. Fast switching speed. We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applicat... See More ⇒

Detailed specifications: S-LBSS84WT1G, LN2302BLT1G, S-LN2302BLT1G, LN2302LT1G, LN2306LT1G, S-LN2306LT1G, LN2312LT1G, S-LN2312LT1G, IRFZ24N, LN235N3T5G, LN4501LT1G, LN8340DT1AG, LN8342DT1AG, LNA2306LT1G, S-LNA2306LT1G, S-LNTA4001NT1G, LNTK2575LT1G

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