All MOSFET. LN2324DT2AG Datasheet

 

LN2324DT2AG Datasheet and Replacement


   Type Designator: LN2324DT2AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DFN2020-6S
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LN2324DT2AG Datasheet (PDF)

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LN2324DT2AG

LN2324DT2AGS-LN2324DT2AG20V N-Channel (D-S) MOSFET1. FEATURESVDS =20VRDS(ON)10.5m,VGS@4.5V,IDS@10ARDS(ON)12.5m,VGS@2.5V,IDS@8ALow RDS(ON) trench technology.Low thermal impedance.Fast switching speed.We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applicat

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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