All MOSFET. LN2324DT2AG Datasheet

 

LN2324DT2AG Datasheet and Replacement


   Type Designator: LN2324DT2AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DFN2020-6S
 

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LN2324DT2AG Datasheet (PDF)

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LN2324DT2AG

LN2324DT2AGS-LN2324DT2AG20V N-Channel (D-S) MOSFET1. FEATURESVDS =20VRDS(ON)10.5m,VGS@4.5V,IDS@10ARDS(ON)12.5m,VGS@2.5V,IDS@8ALow RDS(ON) trench technology.Low thermal impedance.Fast switching speed.We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applicat

Datasheet: S-LBSS84WT1G , LN2302BLT1G , S-LN2302BLT1G , LN2302LT1G , LN2306LT1G , S-LN2306LT1G , LN2312LT1G , S-LN2312LT1G , AON6380 , LN235N3T5G , LN4501LT1G , LN8340DT1AG , LN8342DT1AG , LNA2306LT1G , S-LNA2306LT1G , S-LNTA4001NT1G , LNTK2575LT1G .

History: SSM3K7002F | LSB65R125HT | RZQ045P01TR | RT3K11M | PHD18NQ10T | H02N60SI | PP1410AEA

Keywords - LN2324DT2AG MOSFET datasheet

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