LN8342DT1AG Specs and Replacement
Type Designator: LN8342DT1AG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 301 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: DFN3030-8B
LN8342DT1AG substitution
- MOSFET ⓘ Cross-Reference Search
LN8342DT1AG datasheet
ln8340dt1ag.pdf
LN8340DT1AG N-Channel 30-V (D-S) MOSFET 1. FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. We declare that the material of product are Halogen Free and compliance with RoHS requirements. 2. APPLICATION Power Routing DC/DC Conversion Motor Drives 3. ORDERING INFORMATION Device Marking Shipping LN8340DT1AG N40 3000/Ta... See More ⇒
Detailed specifications: LN2306LT1G, S-LN2306LT1G, LN2312LT1G, S-LN2312LT1G, LN2324DT2AG, LN235N3T5G, LN4501LT1G, LN8340DT1AG, 75N75, LNA2306LT1G, S-LNA2306LT1G, S-LNTA4001NT1G, LNTK2575LT1G, S-LNTK2575LT1G, LNTK3043PT5G, S-LNTK3043PT5G, LP0404N3T5G
Keywords - LN8342DT1AG MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2N7002ESEGP
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