All MOSFET. S-LNA2306LT1G Datasheet

 

S-LNA2306LT1G Datasheet and Replacement


   Type Designator: S-LNA2306LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT23E
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S-LNA2306LT1G Datasheet (PDF)

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S-LNA2306LT1G

LNA2306LT1GS-LNA2306LT1G30V N-Channel Enhancement-Mode MOSFET1. FEATURESVDS= 30VRDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43mRDS(ON), VGS@2.5V, IDS@4.0A = 62mSOT23EWe declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringuniq

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AS2101W | 2SK1033 | NCEP40T17G | AONS65625 | WMR13N03T1 | CSD17301Q5 | WMR07N06TS

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