S-LNA2306LT1G Specs and Replacement

Type Designator: S-LNA2306LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOT23E

S-LNA2306LT1G substitution

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S-LNA2306LT1G datasheet

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 lna2306lt1g s-lna2306lt1g.pdf pdf_icon

S-LNA2306LT1G

LNA2306LT1G S-LNA2306LT1G 30V N-Channel Enhancement-Mode MOSFET 1. FEATURES VDS= 30V RDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43m RDS(ON), VGS@2.5V, IDS@4.0A = 62m SOT23E We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring uniq... See More ⇒

Detailed specifications: LN2312LT1G, S-LN2312LT1G, LN2324DT2AG, LN235N3T5G, LN4501LT1G, LN8340DT1AG, LN8342DT1AG, LNA2306LT1G, IRFB31N20D, S-LNTA4001NT1G, LNTK2575LT1G, S-LNTK2575LT1G, LNTK3043PT5G, S-LNTK3043PT5G, LP0404N3T5G, LP1480WT1G, S-LP1480WT1G

Keywords - S-LNA2306LT1G MOSFET specs

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