LNTK2575LT1G Specs and Replacement

Type Designator: LNTK2575LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 22.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT23

LNTK2575LT1G substitution

- MOSFET ⓘ Cross-Reference Search

 

LNTK2575LT1G datasheet

 ..1. Size:232K  lrc
 lntk2575lt1g s-lntk2575lt1g.pdf pdf_icon

LNTK2575LT1G

LESHAN RADIO COMPANY, LTD. LNTK2575LT1G Small Signal MOSFET S-LNTK2575LT1G 25 V, 0.75 A, Single, N-Channel, ESD Protection, SOT-23 3 Features Advance Planar Technology for Fast Switching, Low RDS(on) 1 Higher Efficiency Extending Battery Life 2 This is a Pb-Free Device S- Prefix for Automotive and Other Applications Requiring SOT 23 Unique Site and Control Ch... See More ⇒

Detailed specifications: LN2324DT2AG, LN235N3T5G, LN4501LT1G, LN8340DT1AG, LN8342DT1AG, LNA2306LT1G, S-LNA2306LT1G, S-LNTA4001NT1G, IRF1405, S-LNTK2575LT1G, LNTK3043PT5G, S-LNTK3043PT5G, LP0404N3T5G, LP1480WT1G, S-LP1480WT1G, LP2301BLT1G, LP2301BLT3G

Keywords - LNTK2575LT1G MOSFET specs

 LNTK2575LT1G cross reference

 LNTK2575LT1G equivalent finder

 LNTK2575LT1G pdf lookup

 LNTK2575LT1G substitution

 LNTK2575LT1G replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs