All MOSFET. LNTK2575LT1G Datasheet

 

LNTK2575LT1G Datasheet and Replacement


   Type Designator: LNTK2575LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 22.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT23
 

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LNTK2575LT1G Datasheet (PDF)

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LNTK2575LT1G

LESHAN RADIO COMPANY, LTD.LNTK2575LT1GSmall Signal MOSFETS-LNTK2575LT1G25 V, 0.75 A, Single, N-Channel,ESD Protection, SOT-233Features Advance Planar Technology for Fast Switching, Low RDS(on)1 Higher Efficiency Extending Battery Life2 This is a Pb-Free Device S- Prefix for Automotive and Other Applications Requiring SOT 23 Unique Site and Control Ch

Datasheet: LN2324DT2AG , LN235N3T5G , LN4501LT1G , LN8340DT1AG , LN8342DT1AG , LNA2306LT1G , S-LNA2306LT1G , S-LNTA4001NT1G , NCEP15T14 , S-LNTK2575LT1G , LNTK3043PT5G , S-LNTK3043PT5G , LP0404N3T5G , LP1480WT1G , S-LP1480WT1G , LP2301BLT1G , LP2301BLT3G .

History: IRF7739L1 | DMP3020LSS

Keywords - LNTK2575LT1G MOSFET datasheet

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