LNTK2575LT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LNTK2575LT1G
Marking Code: T4*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.2 nC
trⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 22.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT23
LNTK2575LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNTK2575LT1G Datasheet (PDF)
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .