All MOSFET. LP1480WT1G Datasheet

 

LP1480WT1G Datasheet and Replacement


   Type Designator: LP1480WT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: SOT323
 

 LP1480WT1G substitution

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LP1480WT1G Datasheet (PDF)

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LP1480WT1G

LP1480WT1GS-LP1480WT1G-20V P-Channel Power Mosfet1. FEATURESV(BR)DSS=-20VRDS(ON) 210m @VGS =-4.5V,ID=-1.0ARDS(ON) 310m @VGS =-2.5V,ID=-0.5AWe declare that the material of product compliance withRoHS requirements and Halogen Free.SC70(SOT-323)S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q

Datasheet: LNA2306LT1G , S-LNA2306LT1G , S-LNTA4001NT1G , LNTK2575LT1G , S-LNTK2575LT1G , LNTK3043PT5G , S-LNTK3043PT5G , LP0404N3T5G , 60N06 , S-LP1480WT1G , LP2301BLT1G , LP2301BLT3G , S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G , LP2501DT1G .

History: STP40NF20 | PTP01N04N | MSF9N90 | STP8N120K5 | SI7129DN | R6007ENJ | MSK2N60T

Keywords - LP1480WT1G MOSFET datasheet

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