LP1480WT1G Specs and Replacement

Type Designator: LP1480WT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: SOT323

LP1480WT1G substitution

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LP1480WT1G datasheet

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 lp1480wt1g s-lp1480wt1g.pdf pdf_icon

LP1480WT1G

LP1480WT1G S-LP1480WT1G -20V P-Channel Power Mosfet 1. FEATURES V(BR)DSS=-20V RDS(ON) 210m @VGS =-4.5V,ID=-1.0A RDS(ON) 310m @VGS =-2.5V,ID=-0.5A We declare that the material of product compliance with RoHS requirements and Halogen Free. SC70(SOT-323) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q... See More ⇒

Detailed specifications: LNA2306LT1G, S-LNA2306LT1G, S-LNTA4001NT1G, LNTK2575LT1G, S-LNTK2575LT1G, LNTK3043PT5G, S-LNTK3043PT5G, LP0404N3T5G, IRLB3034, S-LP1480WT1G, LP2301BLT1G, LP2301BLT3G, S-LP2305DSLT1G, S-LP2307LT1G, LP2309LT1G, LP2309LT3G, LP2501DT1G

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