S-LP2307LT1G Specs and Replacement

Type Designator: S-LP2307LT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT23

S-LP2307LT1G substitution

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S-LP2307LT1G datasheet

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 lp2307lt1g s-lp2307lt1g.pdf pdf_icon

S-LP2307LT1G

LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G VDS= -16V S-LP2307LT1G R Vgs@-4.5V, Ids@-4.7A = 70 m DS(ON), m R DS(ON), Vgs@-2.5V, Ids@-1.0A = 110 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 S- Prefix for Automotive and Other Applications Requiring SOT 23 (TO 236AB) Unique S... See More ⇒

 7.1. Size:497K  lrc
 lp2305dslt1g s-lp2305dslt1g.pdf pdf_icon

S-LP2307LT1G

LESHAN RADIO COMPANY, LTD. 12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G V = -12V DS S-LP2305DSLT1G RDS(ON), Vgs@-4.5V, Ids@" 3.5A = 68m R 3A = 81 DS(ON), Vgs@-2.5V, Ids@" m R 2A = 118 m DS(ON), Vgs@-1.8V, Ids@" 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 SOT 23 (TO 236AB) Fully Characterized Avalan... See More ⇒

Detailed specifications: LNTK3043PT5G, S-LNTK3043PT5G, LP0404N3T5G, LP1480WT1G, S-LP1480WT1G, LP2301BLT1G, LP2301BLT3G, S-LP2305DSLT1G, EMB04N03H, LP2309LT1G, LP2309LT3G, LP2501DT1G, LP3218DT1G, S-LP3407LT1G, LP3415ELT1G, S-LP3415ELT1G, S-LP4101LT1G

Keywords - S-LP2307LT1G MOSFET specs

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