All MOSFET. S-LP2307LT1G Datasheet

 

S-LP2307LT1G Datasheet and Replacement


   Type Designator: S-LP2307LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT23
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S-LP2307LT1G Datasheet (PDF)

 ..1. Size:371K  lrc
 lp2307lt1g s-lp2307lt1g.pdf pdf_icon

S-LP2307LT1G

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V S-LP2307LT1GR Vgs@-4.5V, Ids@-4.7A = 70 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 1103Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2S- Prefix for Automotive and Other Applications Requiring SOT 23 (TO236AB)Unique S

 7.1. Size:497K  lrc
 lp2305dslt1g s-lp2305dslt1g.pdf pdf_icon

S-LP2307LT1G

LESHAN RADIO COMPANY, LTD.12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1GV = -12V DSS-LP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 68mR 3A = 81DS(ON), Vgs@-2.5V, Ids@" mR 2A = 118 mDS(ON), Vgs@-1.8V, Ids@"3Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2SOT 23 (TO236AB)Fully Characterized Avalan

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRLHS6342PBF | LSB65R041GF | WMB048NV6HG4 | SVS14N60TD2 | 2SK3326 | SVS11N70MJD2 | F47W60C3

Keywords - S-LP2307LT1G MOSFET datasheet

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