All MOSFET. S-LP2307LT1G Datasheet

 

S-LP2307LT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: S-LP2307LT1G
   Marking Code: P07
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT23

 S-LP2307LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S-LP2307LT1G Datasheet (PDF)

 ..1. Size:371K  lrc
 lp2307lt1g s-lp2307lt1g.pdf

S-LP2307LT1G S-LP2307LT1G

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V S-LP2307LT1GR Vgs@-4.5V, Ids@-4.7A = 70 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 1103Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2S- Prefix for Automotive and Other Applications Requiring SOT 23 (TO236AB)Unique S

 7.1. Size:497K  lrc
 lp2305dslt1g s-lp2305dslt1g.pdf

S-LP2307LT1G S-LP2307LT1G

LESHAN RADIO COMPANY, LTD.12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1GV = -12V DSS-LP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 68mR 3A = 81DS(ON), Vgs@-2.5V, Ids@" mR 2A = 118 mDS(ON), Vgs@-1.8V, Ids@"3Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2SOT 23 (TO236AB)Fully Characterized Avalan

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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