All MOSFET. LP3218DT1G Datasheet

 

LP3218DT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LP3218DT1G
   Marking Code: 32
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 8.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2020-6S

 LP3218DT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LP3218DT1G Datasheet (PDF)

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 lp3218dt1g.pdf

LP3218DT1G LP3218DT1G

LP3218DT1G12V P-Channel Enhancement MOSFET1. FEATURESLow Profile DFN 2.0x2.0x0.62 mm for Board Space SavingUltra Low RDS(on)ESD Diode.Protected GateThis is a Pb-Free Device We declare that the material of product are Halogen Free andcompliance with RoHS requirements.2.APPLICATIONS Battery Switch High Side Load Switch3. ORDERING INFORMATIOND

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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