All MOSFET. LP3218DT1G Datasheet

 

LP3218DT1G Datasheet and Replacement


   Type Designator: LP3218DT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2020-6S
 

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LP3218DT1G Datasheet (PDF)

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LP3218DT1G

LP3218DT1G12V P-Channel Enhancement MOSFET1. FEATURESLow Profile DFN 2.0x2.0x0.62 mm for Board Space SavingUltra Low RDS(on)ESD Diode.Protected GateThis is a Pb-Free Device We declare that the material of product are Halogen Free andcompliance with RoHS requirements.2.APPLICATIONS Battery Switch High Side Load Switch3. ORDERING INFORMATIOND

Datasheet: S-LP1480WT1G , LP2301BLT1G , LP2301BLT3G , S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G , LP2501DT1G , AO3407 , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , LSI1012LT1G , S-LSI1012LT1G , S-SRK7002LT1G .

History: CEB6086 | AP60WN2K3H

Keywords - LP3218DT1G MOSFET datasheet

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