LP3218DT1G Specs and Replacement

Type Designator: LP3218DT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN2020-6S

LP3218DT1G substitution

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LP3218DT1G datasheet

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LP3218DT1G

LP3218DT1G 12V P-Channel Enhancement MOSFET 1. FEATURES Low Profile DFN 2.0x2.0x0.62 mm for Board Space Saving Ultra Low RDS(on) ESD Diode.Protected Gate This is a Pb-Free Device We declare that the material of product are Halogen Free and compliance with RoHS requirements. 2.APPLICATIONS Battery Switch High Side Load Switch 3. ORDERING INFORMATION D... See More ⇒

Detailed specifications: S-LP1480WT1G, LP2301BLT1G, LP2301BLT3G, S-LP2305DSLT1G, S-LP2307LT1G, LP2309LT1G, LP2309LT3G, LP2501DT1G, AO4407A, S-LP3407LT1G, LP3415ELT1G, S-LP3415ELT1G, S-LP4101LT1G, LRC6N33YT1G, LSI1012LT1G, S-LSI1012LT1G, S-SRK7002LT1G

Keywords - LP3218DT1G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.