All MOSFET. S-LP3407LT1G Datasheet

 

S-LP3407LT1G Datasheet and Replacement


   Type Designator: S-LP3407LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT23
 

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S-LP3407LT1G Datasheet (PDF)

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S-LP3407LT1G

LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

 8.1. Size:312K  lrc
 lp3415elt1g s-lp3415elt1g.pdf pdf_icon

S-LP3407LT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3415ELT1GV = -20V DSS-LP3415ELT1GR Vgs@-4.5V, Ids@-4A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-4A = 753mRDS(ON), Vgs@-1.8V, Ids@-2A = 85Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (

Datasheet: LP2301BLT1G , LP2301BLT3G , S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G , LP2501DT1G , LP3218DT1G , AO4468 , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , LSI1012LT1G , S-LSI1012LT1G , S-SRK7002LT1G , 2N65F .

History: SSF2814E | P2610BT | DMN3035LWN | AUIRFP4310Z | DMN31D5UFZ | IPB34CN10N | FQD2N50TF

Keywords - S-LP3407LT1G MOSFET datasheet

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