All MOSFET. LP3415ELT1G Datasheet

 

LP3415ELT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LP3415ELT1G
   Marking Code: P15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.59 nC
   trⓘ - Rise Time: 1604 nS
   Cossⓘ - Output Capacitance: 128.57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23

 LP3415ELT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LP3415ELT1G Datasheet (PDF)

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 lp3415elt1g s-lp3415elt1g.pdf

LP3415ELT1G LP3415ELT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3415ELT1GV = -20V DSS-LP3415ELT1GR Vgs@-4.5V, Ids@-4A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-4A = 753mRDS(ON), Vgs@-1.8V, Ids@-2A = 85Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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