LP3415ELT1G Specs and Replacement

Type Designator: LP3415ELT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1604 nS

Cossⓘ - Output Capacitance: 128.57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

LP3415ELT1G substitution

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LP3415ELT1G datasheet

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 lp3415elt1g s-lp3415elt1g.pdf pdf_icon

LP3415ELT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G V = -20V DS S-LP3415ELT1G R Vgs@-4.5V, Ids@-4A = 60 m DS(ON), m R DS(ON), Vgs@-2.5V, Ids@-4A = 75 3 m RDS(ON), Vgs@-1.8V, Ids@-2A = 85 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 we declare that the material of product SOT 23 (... See More ⇒

Detailed specifications: LP2301BLT3G, S-LP2305DSLT1G, S-LP2307LT1G, LP2309LT1G, LP2309LT3G, LP2501DT1G, LP3218DT1G, S-LP3407LT1G, IRFP064N, S-LP3415ELT1G, S-LP4101LT1G, LRC6N33YT1G, LSI1012LT1G, S-LSI1012LT1G, S-SRK7002LT1G, 2N65F, 2N65E

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