All MOSFET. LP3415ELT1G Datasheet

 

LP3415ELT1G Datasheet and Replacement


   Type Designator: LP3415ELT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1604 nS
   Cossⓘ - Output Capacitance: 128.57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

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LP3415ELT1G Datasheet (PDF)

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LP3415ELT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3415ELT1GV = -20V DSS-LP3415ELT1GR Vgs@-4.5V, Ids@-4A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-4A = 753mRDS(ON), Vgs@-1.8V, Ids@-2A = 85Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (

Datasheet: LP2301BLT3G , S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G , LP2501DT1G , LP3218DT1G , S-LP3407LT1G , 5N50 , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , LSI1012LT1G , S-LSI1012LT1G , S-SRK7002LT1G , 2N65F , 2N65E .

History: DH020N03P | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | NTMFS024N06C | AP60SL650AFI

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