LP3415ELT1G Datasheet and Replacement
Type Designator: LP3415ELT1G
Marking Code: P15
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.59 nC
trⓘ - Rise Time: 1604 nS
Cossⓘ - Output Capacitance: 128.57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
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LP3415ELT1G Datasheet (PDF)
lp3415elt1g s-lp3415elt1g.pdf

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3415ELT1GV = -20V DSS-LP3415ELT1GR Vgs@-4.5V, Ids@-4A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-4A = 753mRDS(ON), Vgs@-1.8V, Ids@-2A = 85Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFP12N65X2M | SIHB10N40D | NTTFS016N06C | CED05N8 | NDB608BE | AON6794 | BL10N70-A
Keywords - LP3415ELT1G MOSFET datasheet
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History: IXFP12N65X2M | SIHB10N40D | NTTFS016N06C | CED05N8 | NDB608BE | AON6794 | BL10N70-A



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