All MOSFET. LSI1012LT1G Datasheet

 

LSI1012LT1G Datasheet and Replacement


   Type Designator: LSI1012LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT23
 

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LSI1012LT1G Datasheet (PDF)

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 lsi1012lt1g s-lsi1012lt1g.pdf pdf_icon

LSI1012LT1G

LESHAN RADIO COMPANY, LTD.LSI1012LT1GN-Channel 1.8-V (G-S) MOSFETS-LSI1012LT1GFEATURES3D TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD ProtectedD High-Side Switching1D Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)2D Fast Switching Speed: 10 nsD S- Prefix for Automotive and Other Applications Requiring SOT-23Unique Site and Control Change Requiremen

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 lsi1012xt1g.pdf pdf_icon

LSI1012LT1G

LESHAN RADIO COMPANY, LTD.N-Channel 1.8-V (G-S) MOSFETLSI1012XT1GFEATURESD TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD Protected: 2000 VD High-Side SwitchingD Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 10 nsSC-89BENEFITSD Ease in Driving SwitchesD Low Offset (Error) VoltageGate 1D Low-Voltage OperationD High-Speed Circui

Datasheet: LP2309LT3G , LP2501DT1G , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , IRF3205 , S-LSI1012LT1G , S-SRK7002LT1G , 2N65F , 2N65E , 2N65D , 2N65N , 2N65M , 5N65D .

History: 1N65L-AA3-R | 19N10L-TN3-R | 17P10G-TF3-T | 30N03A | 1N65G-TF3-T | 17P10L-TF3-T | BL3N150-W

Keywords - LSI1012LT1G MOSFET datasheet

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