LSI1012LT1G Specs and Replacement
Type Designator: LSI1012LT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOT23
LSI1012LT1G substitution
LSI1012LT1G datasheet
lsi1012lt1g s-lsi1012lt1g.pdf
LESHAN RADIO COMPANY, LTD. LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET S-LSI1012LT1G FEATURES 3 D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected D High-Side Switching 1 D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) 2 D Fast Switching Speed 10 ns D S- Prefix for Automotive and Other Applications Requiring SOT-23 Unique Site and Control Change Requiremen... See More ⇒
lsi1012xt1g.pdf
LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G FEATURES D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected 2000 V D High-Side Switching D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) D Fast Switching Speed 10 ns SC-89 BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage Gate 1 D Low-Voltage Operation D High-Speed Circui... See More ⇒
Detailed specifications: LP2309LT3G , LP2501DT1G , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , IRF3205 , S-LSI1012LT1G , S-SRK7002LT1G , 2N65F , 2N65E , 2N65D , 2N65N , 2N65M , 5N65D .
Keywords - LSI1012LT1G MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
