S-LSI1012LT1G Specs and Replacement

Type Designator: S-LSI1012LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: SOT23

S-LSI1012LT1G substitution

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S-LSI1012LT1G datasheet

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S-LSI1012LT1G

LESHAN RADIO COMPANY, LTD. LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET S-LSI1012LT1G FEATURES 3 D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected D High-Side Switching 1 D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) 2 D Fast Switching Speed 10 ns D S- Prefix for Automotive and Other Applications Requiring SOT-23 Unique Site and Control Change Requiremen... See More ⇒

Detailed specifications: LP2501DT1G, LP3218DT1G, S-LP3407LT1G, LP3415ELT1G, S-LP3415ELT1G, S-LP4101LT1G, LRC6N33YT1G, LSI1012LT1G, IRF740, S-SRK7002LT1G, 2N65F, 2N65E, 2N65D, 2N65N, 2N65M, 5N65D, 5N65E

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