All MOSFET. S-LSI1012LT1G Datasheet

 

S-LSI1012LT1G Datasheet and Replacement


   Type Designator: S-LSI1012LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT23
 

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S-LSI1012LT1G Datasheet (PDF)

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S-LSI1012LT1G

LESHAN RADIO COMPANY, LTD.LSI1012LT1GN-Channel 1.8-V (G-S) MOSFETS-LSI1012LT1GFEATURES3D TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD ProtectedD High-Side Switching1D Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)2D Fast Switching Speed: 10 nsD S- Prefix for Automotive and Other Applications Requiring SOT-23Unique Site and Control Change Requiremen

Datasheet: LP2501DT1G , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , LRC6N33YT1G , LSI1012LT1G , IRF740 , S-SRK7002LT1G , 2N65F , 2N65E , 2N65D , 2N65N , 2N65M , 5N65D , 5N65E .

History: CEB6086 | AP60WN2K3H

Keywords - S-LSI1012LT1G MOSFET datasheet

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