All MOSFET. 2N65N Datasheet

 

2N65N MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N65N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO251

 2N65N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N65N Datasheet (PDF)

 ..1. Size:143K  jh
 2n65 2n65f 2n65e 2n65d 2n65n 2n65m.pdf

2N65N 2N65N

R2N65S E M I C O N D U C T O R650V N-Channel Power MOSFETFEATURESPRODUCT SUMMARYRDS(ON)

 0.1. Size:479K  silan
 svf2n65f svf2n65n svf2n65mj svf2n65d.pdf

2N65N 2N65N

SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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