6N65D Datasheet. Specs and Replacement

Type Designator: 6N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO262

6N65D substitution

- MOSFET ⓘ Cross-Reference Search

 

6N65D datasheet

 ..1. Size:431K  jh
6n65 6n65f 6n65d.pdf pdf_icon

6N65D

6N65 JH 650V N-Channel Power MOSFET S E M I C O N D U C T O R FEATURES PRODUCT SUMMARY RDS(ON)... See More ⇒

 0.1. Size:266K  st
stf26n65dm2.pdf pdf_icon

6N65D

... See More ⇒

 0.2. Size:596K  st
stw56n65dm2.pdf pdf_icon

6N65D

STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre... See More ⇒

 0.3. Size:264K  st
stp26n65dm2.pdf pdf_icon

6N65D

STP26N65DM2 Datasheet N-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 package Features VDS RDS(on) max. ID PTOT Order code TAB STP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, T... See More ⇒

Detailed specifications: 2N65D, 2N65N, 2N65M, 5N65D, 5N65E, 5N65M, 5N65N, 6N65F, IRF640N, LNB10R040W3, LNB20N60, LNB20N65, LNB4N80, LNC045R090, LNC04R035B, LNC04R050, LNC06R062

Keywords - 6N65D MOSFET specs

 6N65D cross reference

 6N65D equivalent finder

 6N65D pdf lookup

 6N65D substitution

 6N65D replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility