6N65D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 6N65D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 142 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 150 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm
Тип корпуса: TO262
6N65D Datasheet (PDF)
6n65 6n65f 6n65d.pdf
6N65JH650V N-Channel Power MOSFETS E M I C O N D U C T O RFEATURESPRODUCT SUMMARYRDS(ON)
stf26n65dm2.pdf
STF26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF26N65DM2 650 V 0.190 20 A 30 W Fast-recovery body diode Extremely low gate charge and input capacitance321 Low on-resistance 100% avalanche testedTO-220FP Extremely high dv/dt ruggednessD(2)
stw56n65dm2.pdf
STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre
stp26n65dm2.pdf
STP26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, T
sw16n65d swf16n65d.pdf
SW16N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.46)@VGS=10VID : 16A Low Gate Charge (Typ 68nC)RDS(ON) : 0.46 Improved dv/dt Capability 100% Avalanche Tested21 Application: Charger, Adaptor, LED2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produce
swd6n65d.pdf
SW6N65D N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS : 650V Features ID : 6A High ruggedness RDS(ON) : 1.3 Low RDS(ON) (Typ 1.3)@VGS=10V Low Gate Charge (Typ 22nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
swf16n65d.pdf
SW16N65DN-channel Enhanced mode TO-220F MOSFETFeaturesTO-220FBVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.46)@VGS=10VID : 16A Low Gate Charge (Typ 68nC)RDS(ON) : 0.46 Improved dv/dt Capability 100% Avalanche Tested21 Application: Charger, Adaptor, LED2311. Gate 2. Drain 3. SourceGeneral Description 3This power MOSFET is produce
cs6n65f cs6n65p cs6n65u cs6n65d.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N65F,CS6N65P,CS6N65U,CS6N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N65F TO-220F
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
