All MOSFET. LNB10R040W3 Datasheet

 

LNB10R040W3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNB10R040W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 117 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 909 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-247

 LNB10R040W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNB10R040W3 Datasheet (PDF)

 ..1. Size:772K  lonten
 lnc10r040w3 lnd10r040w3 lne10r040w3 lnb10r040w3.pdf

LNB10R040W3 LNB10R040W3

LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top