All MOSFET. LNB10R040W3 Datasheet

 

LNB10R040W3 Datasheet and Replacement


   Type Designator: LNB10R040W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 909 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-247
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LNB10R040W3 Datasheet (PDF)

 ..1. Size:772K  lonten
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LNB10R040W3

LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE

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