LNB10R040W3 Datasheet. Specs and Replacement
Type Designator: LNB10R040W3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 909 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-247
LNB10R040W3 substitution
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LNB10R040W3 datasheet
lnc10r040w3 lnd10r040w3 lne10r040w3 lnb10r040w3.pdf
LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi... See More ⇒
Detailed specifications: 2N65N, 2N65M, 5N65D, 5N65E, 5N65M, 5N65N, 6N65F, 6N65D, IRFP260N, LNB20N60, LNB20N65, LNB4N80, LNC045R090, LNC04R035B, LNC04R050, LNC06R062, LNC06R079
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
