All MOSFET. LNB10R040W3 Datasheet

 

LNB10R040W3 Datasheet and Replacement


   Type Designator: LNB10R040W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 909 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-247
 

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LNB10R040W3 Datasheet (PDF)

 ..1. Size:772K  lonten
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LNB10R040W3

LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi

Datasheet: 2N65N , 2N65M , 5N65D , 5N65E , 5N65M , 5N65N , 6N65F , 6N65D , 10N60 , LNB20N60 , LNB20N65 , LNB4N80 , LNC045R090 , LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 .

History: AP4800BGM-HF | IXFL44N100P | AP3A010MT | RJM0603JSC | PH16030L | 2SK711 | STD40NF03L

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