LNB20N65 Datasheet. Specs and Replacement

Type Designator: LNB20N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43.4 nS

Cossⓘ - Output Capacitance: 266 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-247

LNB20N65 substitution

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LNB20N65 datasheet

 ..1. Size:1197K  lonten
 lnc20n65 lnd20n65 lnb20n65.pdf pdf_icon

LNB20N65

LNC20N65/LND20N65/LNB20N65 Lonten N-channel 650V, 20A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 20A D resulting device has low conduction resistance, R 0.5 DS(on),max superior switching performance and high avalanche Q 58.3 nC g,typ energy. Features Low R DS(on) Low gate charge (t... See More ⇒

 7.1. Size:1196K  lonten
 lnc20n60 lnd20n60 lnb20n60.pdf pdf_icon

LNB20N65

LNC20N60/ LND20N60/LNB20N60 Lonten N-channel 600V, 20A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planer VDMOS technology. The I 20A D resulting device has low conduction resistance, R 0.45 DS(on),max superior switching performance and high avalanche Q 63.7 nC g,typ energy. Features Low R DS(on) Low gate charge ... See More ⇒

Detailed specifications: 5N65D, 5N65E, 5N65M, 5N65N, 6N65F, 6N65D, LNB10R040W3, LNB20N60, IRFB4227, LNB4N80, LNC045R090, LNC04R035B, LNC04R050, LNC06R062, LNC06R079, LNC06R110, LNC06R140

Keywords - LNB20N65 MOSFET specs

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