All MOSFET. LNB20N65 Datasheet

 

LNB20N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNB20N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58.3 nC
   trⓘ - Rise Time: 43.4 nS
   Cossⓘ - Output Capacitance: 266 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-247

 LNB20N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNB20N65 Datasheet (PDF)

 ..1. Size:1197K  lonten
 lnc20n65 lnd20n65 lnb20n65.pdf

LNB20N65 LNB20N65

LNC20N65/LND20N65/LNB20N65Lonten N-channel 650V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 58.3 nCg,typenergy.Features Low RDS(on) Low gate charge (t

 7.1. Size:1196K  lonten
 lnc20n60 lnd20n60 lnb20n60.pdf

LNB20N65 LNB20N65

LNC20N60/ LND20N60/LNB20N60Lonten N-channel 600V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.45DS(on),maxsuperior switching performance and high avalanche Q 63.7 nCg,typenergy.Features Low RDS(on) Low gate charge

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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