LNB4N80 Datasheet. Specs and Replacement

Type Designator: LNB4N80  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 95 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 57.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: TO-247

LNB4N80 substitution

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LNB4N80 datasheet

 ..1. Size:1346K  lonten
 lnc4n80 lnd4n80 lnb4n80.pdf pdf_icon

LNB4N80

LNC4N80/LND4N80/LNB4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q... See More ⇒

 ..2. Size:1406K  lonten
 lnc4n80 lnd4n80 lnb4n80 lng4n80 lnh4n80.pdf pdf_icon

LNB4N80

LNC4N80/LND4N80/LNB4N80/LNG4N80/LNH4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gat... See More ⇒

Detailed specifications: 5N65E, 5N65M, 5N65N, 6N65F, 6N65D, LNB10R040W3, LNB20N60, LNB20N65, IRF3710, LNC045R090, LNC04R035B, LNC04R050, LNC06R062, LNC06R079, LNC06R110, LNC06R140, LNC06R200

Keywords - LNB4N80 MOSFET specs

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