All MOSFET. LNB4N80 Datasheet

 

LNB4N80 Datasheet and Replacement


   Type Designator: LNB4N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 57.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO-247
 

 LNB4N80 substitution

   - MOSFET ⓘ Cross-Reference Search

 

LNB4N80 Datasheet (PDF)

 ..1. Size:1346K  lonten
 lnc4n80 lnd4n80 lnb4n80.pdf pdf_icon

LNB4N80

LNC4N80/LND4N80/LNB4N80Lonten N-channel 800V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 800VDSSadvanced planer VDMOS technology. The I 4ADresulting device has low conduction resistance, R 3.8DS(on),maxsuperior switching performance and high avalanche Q 18.9 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q

 ..2. Size:1406K  lonten
 lnc4n80 lnd4n80 lnb4n80 lng4n80 lnh4n80.pdf pdf_icon

LNB4N80

LNC4N80/LND4N80/LNB4N80/LNG4N80/LNH4N80Lonten N-channel 800V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 800VDSSadvanced planer VDMOS technology. The I 4ADresulting device has low conduction resistance, R 3.8DS(on),maxsuperior switching performance and high avalanche Q 18.9 nCg,typenergy.Features Low RDS(on) Low gat

Datasheet: 5N65E , 5N65M , 5N65N , 6N65F , 6N65D , LNB10R040W3 , LNB20N60 , LNB20N65 , P55NF06 , LNC045R090 , LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 .

History: SDF054JAA-U | SCH1302 | IPD50R1K4CE | HGI200N10SL | HGP039N15M | HGK039N08S | NCE01P35K

Keywords - LNB4N80 MOSFET datasheet

 LNB4N80 cross reference
 LNB4N80 equivalent finder
 LNB4N80 lookup
 LNB4N80 substitution
 LNB4N80 replacement

 

 
Back to Top

 


 
.