LNC07R085H Datasheet and Replacement
Type Designator: LNC07R085H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 27.6 nS
Cossⓘ - Output Capacitance: 248 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220
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LNC07R085H Datasheet (PDF)
lnc07r085h lne07r085h.pdf

LNC07R085H&LNE07R085HLonten N-channel 70V, 85A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 70VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 85ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: SFG60N12PF | NVF3055L108 | IRFHM8235 | FCPF165N65S3R0L | IRF3205L | P2806BD | TSM2311CX
Keywords - LNC07R085H MOSFET datasheet
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History: SFG60N12PF | NVF3055L108 | IRFHM8235 | FCPF165N65S3R0L | IRF3205L | P2806BD | TSM2311CX



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