LNC07R085H Datasheet and Replacement
Type Designator: LNC07R085H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27.6 nS
Cossⓘ - Output Capacitance: 248 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220
LNC07R085H substitution
LNC07R085H Datasheet (PDF)
lnc07r085h lne07r085h.pdf

LNC07R085H&LNE07R085HLonten N-channel 70V, 85A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 70VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 85ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand
Datasheet: LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , LNC06R230 , AO3400 , LNC08R055W3 , LNC08R085 , LNC08R160 , LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 , LNC10R180 .
History: 2SK3151 | SSF1007 | IRFP27N60K | IRF7233PBF | MTP1N95 | MS3N80
Keywords - LNC07R085H MOSFET datasheet
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History: 2SK3151 | SSF1007 | IRFP27N60K | IRF7233PBF | MTP1N95 | MS3N80



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