All MOSFET. LNC07R085H Datasheet

 

LNC07R085H Datasheet and Replacement


   Type Designator: LNC07R085H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.6 nS
   Cossⓘ - Output Capacitance: 248 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220
 

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LNC07R085H Datasheet (PDF)

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LNC07R085H

LNC07R085H&LNE07R085HLonten N-channel 70V, 85A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 70VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 85ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand

Datasheet: LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , LNC06R230 , K3569 , LNC08R055W3 , LNC08R085 , LNC08R160 , LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 , LNC10R180 .

History: 2SJ221 | IRFHM8235 | SHD226412 | FDS6679Z | P2806BD | BRCS20P06DP | SWB051R08ES

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