LNC07R085H Datasheet. Specs and Replacement
Type Designator: LNC07R085H 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.6 nS
Cossⓘ - Output Capacitance: 248 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220
LNC07R085H substitution
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LNC07R085H datasheet
lnc07r085h lne07r085h.pdf
LNC07R085H&LNE07R085H Lonten N-channel 70V, 85A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 70V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 8.5m GS technology. This advanced technology has been I 85A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand... See More ⇒
Detailed specifications: LNC04R035B, LNC04R050, LNC06R062, LNC06R079, LNC06R110, LNC06R140, LNC06R200, LNC06R230, IRF9540, LNC08R055W3, LNC08R085, LNC08R160, LNC08R220, LNC10N60, LNC10N65, LNC10R040W3, LNC10R180
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