LNC07R085H MOSFET. Datasheet pdf. Equivalent
Type Designator: LNC07R085H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 70 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 85 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 65.4 nC
Rise Time (tr): 27.6 nS
Drain-Source Capacitance (Cd): 248 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO-220
LNC07R085H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNC07R085H Datasheet (PDF)
..1. Size:884K lonten
lnc07r085h lne07r085h.pdf
lnc07r085h lne07r085h.pdf
LNC07R085H&LNE07R085HLonten N-channel 70V, 85A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 70VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 85ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF1404 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
