All MOSFET. STK3NA50 Datasheet

 

STK3NA50 Datasheet and Replacement


   Type Designator: STK3NA50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT82
 

 STK3NA50 substitution

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STK3NA50 Datasheet (PDF)

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STK3NA50

STK3NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK3NA50 500 V

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STK3NA50

STK3NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTK3NA60 600 V

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STK3NA50

Datasheet: STK22N06 , STK23N05L , STK23N06L , STK2N50 , STK2N80 , STK2NA60 , STK3055E , STK3N50 , 2SK3878 , STK4N25 , STK4N30 , STK4N30L , STK4N40 , STK6N20 , STK9N10 , STP10NA40 , STP10NA40FI .

History: HUF75637P3

Keywords - STK3NA50 MOSFET datasheet

 STK3NA50 cross reference
 STK3NA50 equivalent finder
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