LNC13N50 Datasheet and Replacement
Type Designator: LNC13N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 212 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: TO-220
LNC13N50 substitution
LNC13N50 Datasheet (PDF)
lnc13n50 lnd13n50.pdf

LNC13N50/LND13N50Lonten N-channel 500V, 13A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 13ADresulting device has low conduction resistance, R 0.46DS(on),maxsuperior switching performance and high avalanche Q 33 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q =33
Datasheet: LNC08R160 , LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 , LNC10R180 , LNC12N60 , LNC12N65 , 2SK3568 , LNC16N60 , LNC16N65 , LNC18N50 , LNC20N60 , LNC20N65 , LNC2N60 , LNC2N65 , LNC4N60 .
History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS
Keywords - LNC13N50 MOSFET datasheet
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History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS



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