All MOSFET. LNC13N50 Datasheet

 

LNC13N50 Datasheet and Replacement


   Type Designator: LNC13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 212 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO-220
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LNC13N50 Datasheet (PDF)

 ..1. Size:1255K  lonten
 lnc13n50 lnd13n50.pdf pdf_icon

LNC13N50

LNC13N50/LND13N50Lonten N-channel 500V, 13A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 13ADresulting device has low conduction resistance, R 0.46DS(on),maxsuperior switching performance and high avalanche Q 33 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q =33

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFB5615PBF | 2SK4096LS | UT8205A | SPU02N60C3 | AP2302GN | SI4914DY | WML11N80M3

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