LND04R035B Datasheet and Replacement
Type Designator: LND04R035B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 677 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220F
LND04R035B substitution
LND04R035B Datasheet (PDF)
lnc04r035b lnd04r035b.pdf

LNC04R035B/ LND04R035BLonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 3.5mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withst
Datasheet: LNC4N60 , LNC4N65 , LNC4N80 , LNC5N50 , LNC5N65B , LNC7N60 , LNC7N60D , LNC7N65D , 20N50 , LND06R062 , LND06R079 , LND08R055W3 , LND08R085 , LND10N60 , LND10N65 , LND10R040W3 , LND10R180 .
History: NTPF360N80S3Z
Keywords - LND04R035B MOSFET datasheet
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History: NTPF360N80S3Z



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