All MOSFET. LND04R035B Datasheet

 

LND04R035B Datasheet and Replacement


   Type Designator: LND04R035B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 677 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220F
 

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LND04R035B Datasheet (PDF)

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LND04R035B

LNC04R035B/ LND04R035BLonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 3.5mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withst

Datasheet: LNC4N60 , LNC4N65 , LNC4N80 , LNC5N50 , LNC5N65B , LNC7N60 , LNC7N60D , LNC7N65D , IRF1407 , LND06R062 , LND06R079 , LND08R055W3 , LND08R085 , LND10N60 , LND10N65 , LND10R040W3 , LND10R180 .

History: 2N7002BK | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | AP70T03GJ | SM140R50CT1TL

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