All MOSFET. LND04R035B Datasheet

 

LND04R035B MOSFET. Datasheet pdf. Equivalent


   Type Designator: LND04R035B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 139 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 677 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220F

 LND04R035B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LND04R035B Datasheet (PDF)

 ..1. Size:728K  lonten
 lnc04r035b lnd04r035b.pdf

LND04R035B LND04R035B

LNC04R035B/ LND04R035BLonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 3.5mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withst

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History: IXFP5N100PM | 2N7272R | IRFU220N | SVSP11N60KD2 | SVS65R280FD4 | WMK048NV6HG4 | 2N7268U

 

 
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