LND04R035B MOSFET. Datasheet pdf. Equivalent
Type Designator: LND04R035B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 139 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 677 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220F
LND04R035B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LND04R035B Datasheet (PDF)
..1. Size:728K lonten
lnc04r035b lnd04r035b.pdf
lnc04r035b lnd04r035b.pdf
LNC04R035B/ LND04R035BLonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 3.5mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withst
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