LND04R035B Datasheet. Specs and Replacement
Type Designator: LND04R035B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 677 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220F
LND04R035B substitution
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LND04R035B datasheet
lnc04r035b lnd04r035b.pdf
LNC04R035B/ LND04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 3.5m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and with st... See More ⇒
Detailed specifications: LNC4N60, LNC4N65, LNC4N80, LNC5N50, LNC5N65B, LNC7N60, LNC7N60D, LNC7N65D, IRFP450, LND06R062, LND06R079, LND08R055W3, LND08R085, LND10N60, LND10N65, LND10R040W3, LND10R180
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