All MOSFET. LND06R079 Datasheet

 

LND06R079 Datasheet and Replacement


   Type Designator: LND06R079
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 269 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: TO-220F
 

 LND06R079 substitution

   - MOSFET ⓘ Cross-Reference Search

 

LND06R079 Datasheet (PDF)

 ..1. Size:1191K  lonten
 lnc06r079 lnd06r079 lne06r079.pdf pdf_icon

LND06R079

LNC06R079/LND06R079/LNE06R079Lonten N-channel 60V, 90A, 7.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.9mGStechnology. This advanced technology has been I 90ADespecially tailored to minimize on-state resistance,provide superior switching performance, and wit

 7.1. Size:1130K  lonten
 lnc06r062 lnd06r062 lne06r062.pdf pdf_icon

LND06R079

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit

Datasheet: LNC4N80 , LNC5N50 , LNC5N65B , LNC7N60 , LNC7N60D , LNC7N65D , LND04R035B , LND06R062 , P60NF06 , LND08R055W3 , LND08R085 , LND10N60 , LND10N65 , LND10R040W3 , LND10R180 , LND12N60 , LND12N65 .

History: ZXMS6005SGQ | DAMI160N100 | FTK1N60I | AOD4112 | 2SK1458LS | 2SK1465 | 2SK2464

Keywords - LND06R079 MOSFET datasheet

 LND06R079 cross reference
 LND06R079 equivalent finder
 LND06R079 lookup
 LND06R079 substitution
 LND06R079 replacement

 

 
Back to Top

 


 
.