LND06R079 Datasheet. Specs and Replacement

Type Designator: LND06R079  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 269 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm

Package: TO-220F

LND06R079 substitution

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LND06R079 datasheet

 ..1. Size:1191K  lonten
 lnc06r079 lnd06r079 lne06r079.pdf pdf_icon

LND06R079

LNC06R079/LND06R079/LNE06R079 Lonten N-channel 60V, 90A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 7.9m GS technology. This advanced technology has been I 90A D especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒

 7.1. Size:1130K  lonten
 lnc06r062 lnd06r062 lne06r062.pdf pdf_icon

LND06R079

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit... See More ⇒

Detailed specifications: LNC4N80, LNC5N50, LNC5N65B, LNC7N60, LNC7N60D, LNC7N65D, LND04R035B, LND06R062, AO4407, LND08R055W3, LND08R085, LND10N60, LND10N65, LND10R040W3, LND10R180, LND12N60, LND12N65

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