LND08R055W3 Datasheet. Specs and Replacement
Type Designator: LND08R055W3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 888 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-220F
LND08R055W3 substitution
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LND08R055W3 datasheet
lnc08r055w3 lnd08r055w3 lne08r055w3.pdf
LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per... See More ⇒
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LNC08R085 LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with ... See More ⇒
Detailed specifications: LNC5N50, LNC5N65B, LNC7N60, LNC7N60D, LNC7N65D, LND04R035B, LND06R062, LND06R079, BS170, LND08R085, LND10N60, LND10N65, LND10R040W3, LND10R180, LND12N60, LND12N65, LND13N50
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