All MOSFET. LND08R055W3 Datasheet

 

LND08R055W3 Datasheet and Replacement


   Type Designator: LND08R055W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38.9 nS
   Cossⓘ - Output Capacitance: 888 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220F
 

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LND08R055W3 Datasheet (PDF)

 ..1. Size:1141K  lonten
 lnc08r055w3 lnd08r055w3 lne08r055w3.pdf pdf_icon

LND08R055W3

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per

 7.1. Size:1349K  lonten
 lnc08r085 lnd08r085 lne08r085.pdf pdf_icon

LND08R055W3

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

Datasheet: LNC5N50 , LNC5N65B , LNC7N60 , LNC7N60D , LNC7N65D , LND04R035B , LND06R062 , LND06R079 , 18N50 , LND08R085 , LND10N60 , LND10N65 , LND10R040W3 , LND10R180 , LND12N60 , LND12N65 , LND13N50 .

History: AOW190A60C | TK34A10N1 | AFN3404S23RG | P0950ETF | 2P308A9 | MPSW60M086CFD | LNH05R100

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