LND13N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: LND13N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 185 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: TO-220F
LND13N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LND13N50 Datasheet (PDF)
..1. Size:1255K lonten
lnc13n50 lnd13n50.pdf
lnc13n50 lnd13n50.pdf
LNC13N50/LND13N50Lonten N-channel 500V, 13A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 13ADresulting device has low conduction resistance, R 0.46DS(on),maxsuperior switching performance and high avalanche Q 33 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q =33
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
