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LND13N50 Specs and Replacement

Type Designator: LND13N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: TO-220F

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LND13N50 datasheet

 ..1. Size:1255K  lonten
 lnc13n50 lnd13n50.pdf pdf_icon

LND13N50

LNC13N50/LND13N50 Lonten N-channel 500V, 13A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 13A D resulting device has low conduction resistance, R 0.46 DS(on),max superior switching performance and high avalanche Q 33 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q =33 ... See More ⇒

Detailed specifications: LND08R055W3, LND08R085, LND10N60, LND10N65, LND10R040W3, LND10R180, LND12N60, LND12N65, SI2302, LND16N60, LND16N65, LND18N50, LND20N60, LND20N65, LND2N60, LND2N65, LND4N60

Keywords - LND13N50 MOSFET specs

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