All MOSFET. LND18N50 Datasheet

 

LND18N50 Datasheet and Replacement


   Type Designator: LND18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 284 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220F
 

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LND18N50 Datasheet (PDF)

 ..1. Size:1262K  lonten
 lnc18n50 lnd18n50.pdf pdf_icon

LND18N50

LNC18N50/LND18N50Lonten N-channel 500V, 18A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 18ADresulting device has low conduction resistance, R 0.28DS(on),maxsuperior switching performance and high avalanche Q 50.5 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q =5

Datasheet: LND10N65 , LND10R040W3 , LND10R180 , LND12N60 , LND12N65 , LND13N50 , LND16N60 , LND16N65 , 2N60 , LND20N60 , LND20N65 , LND2N60 , LND2N65 , LND4N60 , LND4N65 , LND4N80 , LND5N50 .

History: OSG70R600DSF

Keywords - LND18N50 MOSFET datasheet

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