LND18N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: LND18N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50.5 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 284 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220F
LND18N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LND18N50 Datasheet (PDF)
..1. Size:1262K lonten
lnc18n50 lnd18n50.pdf
lnc18n50 lnd18n50.pdf
LNC18N50/LND18N50Lonten N-channel 500V, 18A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 18ADresulting device has low conduction resistance, R 0.28DS(on),maxsuperior switching performance and high avalanche Q 50.5 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q =5
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