LND18N50 PDF and Equivalents Search

 

LND18N50 Specs and Replacement

Type Designator: LND18N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 284 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-220F

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LND18N50 datasheet

 ..1. Size:1262K  lonten
 lnc18n50 lnd18n50.pdf pdf_icon

LND18N50

LNC18N50/LND18N50 Lonten N-channel 500V, 18A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 18A D resulting device has low conduction resistance, R 0.28 DS(on),max superior switching performance and high avalanche Q 50.5 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q =5... See More ⇒

Detailed specifications: LND10N65, LND10R040W3, LND10R180, LND12N60, LND12N65, LND13N50, LND16N60, LND16N65, 20N50, LND20N60, LND20N65, LND2N60, LND2N65, LND4N60, LND4N65, LND4N80, LND5N50

Keywords - LND18N50 MOSFET specs

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