All MOSFET. LND18N50 Datasheet

 

LND18N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LND18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50.5 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 284 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220F

 LND18N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LND18N50 Datasheet (PDF)

 ..1. Size:1262K  lonten
 lnc18n50 lnd18n50.pdf

LND18N50 LND18N50

LNC18N50/LND18N50Lonten N-channel 500V, 18A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 18ADresulting device has low conduction resistance, R 0.28DS(on),maxsuperior switching performance and high avalanche Q 50.5 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q =5

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FSL923AOR

 

 
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