LND20N60 MOSFET Datasheet: N-Ch, 600V, 20A. Full specification with pinout and replacement list

LND20N60 Specs and Replacement

Type Designator: LND20N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46.1 nS

Cossⓘ - Output Capacitance: 263 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO-220F

LND20N60 substitution

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LND20N60 datasheet

..1. Size:1196K lonten
lnc20n60 lnd20n60 lnb20n60.pdf pdf_icon

LNC20N60/ LND20N60/LNB20N60 Lonten N-channel 600V, 20A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planer VDMOS technology. The I 20A D resulting device has low conduction resistance, R 0.45 DS(on),max superior switching performance and high avalanche Q 63.7 nC g,typ energy. Features Low R DS(on) Low gate charge ... See More ⇒

7.1. Size:1197K lonten
lnc20n65 lnd20n65 lnb20n65.pdf pdf_icon

LNC20N65/LND20N65/LNB20N65 Lonten N-channel 650V, 20A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 20A D resulting device has low conduction resistance, R 0.5 DS(on),max superior switching performance and high avalanche Q 58.3 nC g,typ energy. Features Low R DS(on) Low gate charge (t... See More ⇒

Detailed specifications: LND10R040W3, LND10R180, LND12N60, LND12N65, LND13N50, LND16N60, LND16N65, LND18N50, IRF520, LND20N65, LND2N60, LND2N65, LND4N60, LND4N65, LND4N80, LND5N50, LND5N65B