All MOSFET. LNDN10N65 Datasheet

 

LNDN10N65 Datasheet and Replacement


   Type Designator: LNDN10N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34.64 nS
   Cossⓘ - Output Capacitance: 144.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

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LNDN10N65 Datasheet (PDF)

 ..1. Size:1293K  lonten
 lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf pdf_icon

LNDN10N65

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65Lonten N-channel 650V, 10A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 10ADresulting device has low conduction resistance, R 1.0DS(on),maxsuperior switching performance and high avalanche Q 34.2 nCg,typenergy.Features Low RDS(on)

 9.1. Size:1285K  lonten
 lnd12n65 lnc12n65 lne12n65 lnf12n65 lndn12n65.pdf pdf_icon

LNDN10N65

LND12N65/LNC12N65/LNE12N65/LNF12N65/LNDN12N65Lonten N-channel 650V, 12A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 12ADresulting device has low conduction resistance, R 0.8DS(on),maxsuperior switching performance and high avalanche Q 41.9 nCg,typenergy.Features Low RDS(on)

Datasheet: LND4N60 , LND4N65 , LND4N80 , LND5N50 , LND5N65B , LND7N60 , LND7N60D , LND7N65D , MMIS60R580P , LNDN12N65 , LNE06R062 , LNE06R079 , LNE06R110 , LNE06R140 , LNE07R085H , LNE08R055W3 , LNE08R085 .

History: IRF9335TRPBF

Keywords - LNDN10N65 MOSFET datasheet

 LNDN10N65 cross reference
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