LNDN10N65 MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

LNDN10N65 Specs and Replacement

Type Designator: LNDN10N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34.64 nS

Cossⓘ - Output Capacitance: 144.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

LNDN10N65 substitution

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LNDN10N65 datasheet

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lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf pdf_icon

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 10A D resulting device has low conduction resistance, R 1.0 DS(on),max superior switching performance and high avalanche Q 34.2 nC g,typ energy. Features Low R DS(on) ... See More ⇒

9.1. Size:1285K lonten
lnd12n65 lnc12n65 lne12n65 lnf12n65 lndn12n65.pdf pdf_icon

LND12N65/LNC12N65/LNE12N65/LNF12N65/LNDN12N65 Lonten N-channel 650V, 12A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 12A D resulting device has low conduction resistance, R 0.8 DS(on),max superior switching performance and high avalanche Q 41.9 nC g,typ energy. Features Low R DS(on) ... See More ⇒

Detailed specifications: LND4N60, LND4N65, LND4N80, LND5N50, LND5N65B, LND7N60, LND7N60D, LND7N65D, 7N60, LNDN12N65, LNE06R062, LNE06R079, LNE06R110, LNE06R140, LNE07R085H, LNE08R055W3, LNE08R085