All MOSFET. LNE07R085H Datasheet

 

LNE07R085H Datasheet and Replacement


   Type Designator: LNE07R085H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 65.4 nC
   tr ⓘ - Rise Time: 27.6 nS
   Cossⓘ - Output Capacitance: 248 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-263
 

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LNE07R085H Datasheet (PDF)

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LNE07R085H

LNC07R085H&LNE07R085HLonten N-channel 70V, 85A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 70VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 85ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand

Datasheet: LND7N60D , LND7N65D , LNDN10N65 , LNDN12N65 , LNE06R062 , LNE06R079 , LNE06R110 , LNE06R140 , 8N60 , LNE08R055W3 , LNE08R085 , LNE08R160 , LNE10N60 , LNE10N65 , LNE10R040W3 , LNE10R180 , LNE12N60 .

History: PTA20N65A | FCHD125N65S3R0 | IRF9243 | MTP25N05E | R5019ANX | STB11NM60

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