All MOSFET. LNE07R085H Datasheet

 

LNE07R085H Datasheet and Replacement


   Type Designator: LNE07R085H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27.6 nS
   Cossⓘ - Output Capacitance: 248 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-263
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LNE07R085H Datasheet (PDF)

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LNE07R085H

LNC07R085H&LNE07R085HLonten N-channel 70V, 85A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 70VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 8.5mGStechnology. This advanced technology has been I 85ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SSFD3004 | APT4020BVR | IRFSL3306PBF | NTP30N06 | FQU6P25TU | CHM8968JGP | HSS2302B

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