LNE07R085H PDF and Equivalents Search

 

LNE07R085H Specs and Replacement

Type Designator: LNE07R085H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27.6 nS

Cossⓘ - Output Capacitance: 248 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-263

LNE07R085H substitution

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LNE07R085H datasheet

 ..1. Size:884K  lonten
 lnc07r085h lne07r085h.pdf pdf_icon

LNE07R085H

LNC07R085H&LNE07R085H Lonten N-channel 70V, 85A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 70V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 8.5m GS technology. This advanced technology has been I 85A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand... See More ⇒

Detailed specifications: LND7N60D, LND7N65D, LNDN10N65, LNDN12N65, LNE06R062, LNE06R079, LNE06R110, LNE06R140, IRFB7545, LNE08R055W3, LNE08R085, LNE08R160, LNE10N60, LNE10N65, LNE10R040W3, LNE10R180, LNE12N60

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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